OD-880L

HIGH-POWER GaAlAs IR EMITTERS OD-880L FEATURES High reliability liquid-phase epitaxially grown GaAlAs 880nm peak emission for optimum matching with ODD-45W photodiode Wide range of linear power output Hermetically sealed TO-46 package Medium emission angle for best coverage/power density 1.00 MIN. GLASS DOME .015 ANODE (CASE) .209 .220 .183 .152 .186 .156 .017 .024 .043 .143 .150 .100 .041 www.DataSheet4U.com CATHODE .036 45° All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C Total Power Output, Po PARAMETERS TEST CONDITIONS IF = 100mA IF = 50mA IF = 100mA IR = 10MA VR = 0V MIN 18 TYP 20 50 80 35 30 17 MAX UNITS mW/sr nm nm mW Peak Emission Wavelength, LP Spectral Bandwidth at 50%, $L Half Intensity Beam Angle, Q Forward Voltage, VF Radiant Intensity, Ie 880 Capacitance, C Rise Time Fall Time Reverse Breakdown Voltage, VR 5 1.55 1.9 Volts Volts Msec Msec pF Deg 0.5 0.5 ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Continuous Forward Current Reverse Voltage Power Dissipation1 190mW 100mA 5V 3A Peak Forward Current (10Ms, 400Hz)2 Lead Soldering Temperature (1/16" from case for 10sec) 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C 260°C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 -55°C TO 100°C 400°C/W Typical 135°C/W Typica...