LH28F004SU-Z9

LH28F004SU-Z9 FEATURES 42-PIN CSP 4M (512 × 8) Flash Memory TOP VIEW 512K × 8 Word Configuration 2.7 V Write/Erase Operation (5 V ± 0.5 V VPP, 3.0 V ± 0.3 V VCC, +15°C to +35°C) – No Requirement For DC/DC Converter To Write/Erase 1 A GND B C D E F A17 A10 A14 A16 A15 2 DQ6 DQ7 NC A13 A11 A12 3 VCC DQ4 DQ5 A9 WE A8 4 VCC NC NC NC RP VPP 5 DQ2 NC DQ3 RY/BY A7 A18 6 OE DQ0 DQ1 A6 A4 A5 7 GND CE A0 A3 A1 A2 150 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V) Minimum 2.7 V Read Capability – 190 ns Maximum Access Time (VCC = 2.7 V, -20°C to +85°C) – 180 ns Maximum Access Time (VCC = 2.7 V, 0°C to +70°C) 32 Independently Lockable Blocks (16K) 100,000 Erase Cycles per Block Automated Byte Write/Block Erase – Command User Interface – Status Register – RY  / » BY  » Status Output 28F004SU-Z9-1 Figure 1. CSP Configuration INTRODUCTION Sharp’s LH28F004SU 4M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities, 3.3 V low power operation and very high read/write performance, the LH28F004SU is also the ideal choice for designing embedded mass storage flash memory systems. The LH28F004SU’s independently lockable 32 symmetrical blocked architecture (16K each) extended cycling, low power operation, very fast write and read performance and selective block locking provide a highly flexible memory component suitable for cellular phone, facsimil...