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HAT2197R

Renesas Technology
Part Number HAT2197R
Manufacturer Renesas Technology
Description Silicon N-Channel Power MOSFET
Published Nov 7, 2008
Detailed Description HAT2197R Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 4.5 V gate drive ...
Datasheet PDF File HAT2197R PDF File

HAT2197R
HAT2197R

Overview
HAT2197R Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 4.
5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 5.
3 mΩ typ.
(at VGS = 10 V) Outline SOP-8 8 7 65 56 7 8 DD D D 1 234 REJ03G0061-0201Z Rev.
2.
01 Nov.
30.
2016 4 G SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Rev.
2.
01, Nov.
30.
2016, page 1 of 7 HAT2197R Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID(pulse)Note1 Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation IDR IAP Note 2 EAR Note 2 Pch No...


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