HAT2165N
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 2.8 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTSP0008DC-A (Package name: LFPAK-i)
1(S)
2XXX
2(S)
3(S)
8(D)
4(G)
7(D)
4
6(D)
G
5(D)
5678 DDDD...
