HAT2129H
Silicon N Channel Power MOS FET Power Switching
Features
Capable of 7 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 6 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK )
5
1 234
5 D
4 G
SSS 123
REJ03G0049-0500 Rev.5.00
Sep 20, 2005
1, 2, 3 Source
4
Gate
5
Dra...
