FDZ7296

FDZ7296 November 2004 FDZ7296 30V N-Channel PowerTrench® BGA MOSFET General Description Combining Fairchild’s advanced PowerTrench process with state-of-the-art BGA packaging, the FDZ7296 minimizes both PCB space and RDS(ON). This BGA www.DataSheet4U.com MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). Features 11 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 12 mΩ @ VGS = 4.5 V Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8. Ultra-thin package: less than 0.80 mm height when mounted to PCB. High performance trench technology for extremely low RDS(ON) Optimized for low Qg and Qgd to enable fast switching and reduce CdV/dt gate coupling Applications High-side Mosfet in DC-DC converters for Server and Notebook applications D D S S S D S S S S D D Pin 1 S S S S 7296 G Pin 1 G D S D Top Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TA=25 C unless otherwise noted o Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range Ratings 30 ±20 11 20 2.1 –55 to +150 Units V V A W °C Thermal Characteristics RθJA RθJB RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-C...