SB073P200-W-Ag/Al
Schottky Barrier Diode Wafer 73 Mils, 200 Volt, 5 Amp
Data Sheet
Features
Oxide Passivated Junction L...
SB073P200-W-Ag/Al
Schottky Barrier Diode Wafer 73 Mils, 200 Volt, 5 Amp
Data Sheet
Features
Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier
1. Solderable Surface Ti/Ni/Ag - Suffix "Ag" 2. Wire Bond Surface Aluminium - Suffix "Al"
Anode
www.DataSheet4U.com
Solderable Surface Ti/Ni/Ag Cathode
Cathode
Symbol
Electrical Characteristics @ 25 C
Maximum Repetitive Reverse Voltage (2) Maximum Forward Voltage (1)(2) Typical Average Forward Rectified Current (2) Reverse Leakage Current (2) Reverse Leakage Current @ 125 C (2) Junction Operating Temperature Range (2) Storage Temperature Range (2)
Symbol Unit
VRRM VF IF(AV) IR IR TJ TSG Volt Volt Amp
SB073P200-W-Ag/Al (See ordering code below)
200 0.85 5 10 5 -65 to +150 -65 to +150
µA mA
C C
(1) Pulse Width tp = < 300µS, Duty Cycle <2% (2) The characteristics above assume the die are assembled in indusry standard packages using appropriate attach methods.
Ordering Code SB040P150-W-Ag
Schottky Barrier 40 Mils Pt Barrier 150 Volt Wafer Ti/Ni/Ag
Mechanical Dimensions Wafer Die
Wafer Diameter - 100 mm (4") Wafer Thickness 420 +/- 20 Top (Anode) - Ti/Ni/Ag (Suffix "Ag") or Aluminium (Suffix "Al") Bottom (cathode) Ti/Ni/Ag
64.5 (1.64)
73 (1.85)
64.5 (1.64)
73 (1.85)
420 +/- 20 µm
Third Angle Protection
The information in this datasheet does not form part of any contract, quotation guarantee,warranty or representation, it has been produced in go...