STS7NF60L

N-CHANNEL 60V - 0.017 Ω - 7.5A SO-8 STripFET™ II POWER MOSFET TYPE STS7NF60L www.DataSheet4U.com s TYPICAL s STS7NF60L VDSS 60 V RDS(on) < 0.0195 Ω ID 7.5 A s RDS(on) = 0.017 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs SO-8 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() Ptot EAS (1) April 2002 . Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Single Pulse Avalanche Energy Value 60 60 ± 16 7.5 4.7 30 2.5 350 (1) Starting T j = 25 oC, ID = 7.5 A VDD = 30 V Unit V V V A A A W mJ () Pulse width limited by safe operating area. 1/8 STS7NF60L THERMAL DATA Rthj-amb(#) Tj Tstg Thermal Resistance Junction-ambient Maximum Operating Junction Temperature Storage Temperature Max 50 150 -55 to 150 °C/W °C °C (#) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and ...