N-CHANNEL 60V - 0.017 Ω - 7.5A SO-8 STripFET™ II POWER MOSFET
TYPE STS7NF60L
www.DataSheet4U.com s TYPICAL
s
STS7NF60L
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N-CHANNEL 60V - 0.017 Ω - 7.5A SO-8 STripFET™ II POWER MOSFET
TYPE STS7NF60L
www.DataSheet4U.com s TYPICAL
s
STS7NF60L
VDSS 60 V
RDS(on) < 0.0195 Ω
ID 7.5 A
s
RDS(on) = 0.017 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting
transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM() Ptot EAS (1) April 2002
.
Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Single Pulse Avalanche Energy
Value 60 60 ± 16 7.5 4.7 30 2.5 350
(1) Starting T j = 25 oC, ID = 7.5 A VDD = 30 V
Unit V V V A A A W mJ
() Pulse width limited by safe operating area.
1/8
STS7NF60L
THERMAL DATA
Rthj-amb(#) Tj Tstg Thermal Resistance Junction-ambient Maximum Operating Junction Temperature Storage Temperature Max 50 150 -55 to 150 °C/W °C °C
(#) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and ...