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STS7NF30L

STMicroelectronics

N-CHANNEL POWER MOSFET

® STS7NF30L N - CHANNEL 30V - 0.021Ω - 7A SO-8 STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STS7NF30L www.DataSheet4U....


STMicroelectronics

STS7NF30L

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® STS7NF30L N - CHANNEL 30V - 0.021Ω - 7A SO-8 STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STS7NF30L www.DataSheet4U.com s TYPICAL s V DSS 30 V R DS(on) < 0.025 Ω ID 7A s RDS(on) = 0.021 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique " Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs s SO-8 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS ID Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C o o Value 30 30 ± 20 7 4.4 42 2.5 Unit V V V A A A W IDM ( ) P tot () Pulse width limited by safe operating area May 1999 1/5 STS7NF30L THERMAL DATA R thj-amb Tj T stg (*)Thermal Resistance Junction-ambient Maximum Operating Junction Temperature Storage Temperature 50 150 -55 to 150 o C/W o C o C (*) Mounted on FR-4 board ( (t ≤ 10sec) ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF www....




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