STS6DNF30V

DUAL N-CHANNEL 30V - 0.026Ω - 6A SO-8 2.5V-DRIVE STripFET™ II POWER MOSFET TYPE STS6DNF30V www.DataSheet4U.com s s s s STS6DNF30V VDSS 30 V RDS(on) <0.030Ω (@4.5V) <0.038Ω (@2.5V) ID 6A TYPICAL RDS(on) = 0.026Ω (@4.5V) TYPICAL RDS(on) = 0.030Ω (@2.5V) ULTRA LOW THRESHOLD GATE DRIVE (2.5V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SO-8 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size ™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s BATTERY SAFETY UNIT IN NOMADIC EQUIPMENT s DC-DC CONVERTERS s POWER MANAGEMENT IN PORTABLE/ DESKTOP PCS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Single Operation Drain Current (continuos) at TC = 100°C Single Operation Drain Current (pulsed) Total Dissipation at TC = 25°C Dual Operation Total Dissipation at TC = 25°C Single Operation Value 30 30 ±12 6 3.8 24 2 1.6 Unit V V V A A A W W IDM (l) PTOT (q) Pulse width limited by safe operating area July 2002 1/8 STS6DNF30V THERMAL DATA Rthj-amb Tj Tstg Thermal Resistance Junction-ambient Max Single Operation Thermal Resistance Junction-ambient Max Dual Operatio...