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STD6NM60N-1 Dataheets PDF



Part Number STD6NM60N-1
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STD6NM60N-1 DatasheetSTD6NM60N-1 Datasheet (PDF)

STD6NM60N - STD6NM60N-1 STF6NM60N - STP6NM60N N-channel 600V - 0.85Ω - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET Features www.DataSheet4U.com Type VDSS (@Tjmax) 650V 650V 650V 650V RDS(on) <0.92Ω <0.92Ω <0.92Ω <0.92Ω ID 4.6A 1 3 2 1 3 2 STD6NM60N STD6NM60N-1 STF6NM60N STP6NM60N 4.6A 4.6A (1) 4.6A TO-220 TO-220FP 1. Limited only by maximum temperature allowed 1 3 3 2 1 ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input.

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STD6NM60N - STD6NM60N-1 STF6NM60N - STP6NM60N N-channel 600V - 0.85Ω - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET Features www.DataSheet4U.com Type VDSS (@Tjmax) 650V 650V 650V 650V RDS(on) <0.92Ω <0.92Ω <0.92Ω <0.92Ω ID 4.6A 1 3 2 1 3 2 STD6NM60N STD6NM60N-1 STF6NM60N STP6NM60N 4.6A 4.6A (1) 4.6A TO-220 TO-220FP 1. Limited only by maximum temperature allowed 1 3 3 2 1 ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance DPAK IPAK Description This device is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Internal schematic diagram Application ■ Switching applications Order codes Part number STD6NM60N-1 STD6NM60N STF6NM60N STP6NM60N Marking D6NM60N D6NM60N F6NM60N P6NM60N Package IPAK DPAK TO-220FP TO-220 Packaging Tube Tape & reel Tube Tube June 2007 Rev 2 1/17 www.st.com 17 Contents STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 www.DataSheet4U.com 3 Test circuit ................................................ 9 4 5 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N Electrical ratings 1 Electrical ratings Table 1. Symbol Absolute maximum ratings Value Parameter TO-220 DPAK/IPAK Unit TO-220FP V V 4.6 (1) 2.9 (1) 18.4 (1) 20 15 -2500 A A A W V/ns V VDS www.DataSheet4U.com Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) Operating junction temperature Storage temperature 4.6 2.9 18.4 45 600 ± 25 VGS ID ID IDM (2) PTOT dv/dt (3) VISO Tj Tstg -55 to 150 °C 1. Limited by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤4.6A, di/dt ≤400A/µs, VDD = 80% V(BR)DSS Table 2. Symbol Thermal data Value Parameter TO-220 DPAK/IPAK 2.78 62.5 300 Unit TO-220FP 6.25 °C/W °C/W °C Rthj-case Rthj-amb Tl Thermal resistance junction-case max Thermal resistance junction-amb max Maximum lead temperature for soldering purpos.


STD6NM60N STD6NM60N-1 STP6NS25


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