Document
STD6NM60N - STD6NM60N-1 STF6NM60N - STP6NM60N
N-channel 600V - 0.85Ω - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET
Features
www.DataSheet4U.com
Type
VDSS (@Tjmax) 650V 650V 650V 650V
RDS(on) <0.92Ω <0.92Ω <0.92Ω <0.92Ω
ID 4.6A
1 3 2
1 3 2
STD6NM60N STD6NM60N-1 STF6NM60N STP6NM60N
4.6A 4.6A (1) 4.6A
TO-220
TO-220FP
1. Limited only by maximum temperature allowed
1
3
3 2 1
■ ■ ■
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
DPAK
IPAK
Description
This device is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
Internal schematic diagram
Application
■
Switching applications
Order codes
Part number STD6NM60N-1 STD6NM60N STF6NM60N STP6NM60N Marking D6NM60N D6NM60N F6NM60N P6NM60N Package IPAK DPAK TO-220FP TO-220 Packaging Tube Tape & reel Tube Tube
June 2007
Rev 2
1/17
www.st.com 17
Contents
STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
www.DataSheet4U.com
3
Test circuit
................................................ 9
4 5 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Value Parameter TO-220 DPAK/IPAK Unit TO-220FP V V 4.6 (1) 2.9 (1) 18.4 (1) 20 15 -2500 A A A W V/ns V
VDS
www.DataSheet4U.com
Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) Operating junction temperature Storage temperature 4.6 2.9 18.4 45
600 ± 25
VGS ID ID IDM (2) PTOT dv/dt (3) VISO Tj Tstg
-55 to 150
°C
1. Limited by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤4.6A, di/dt ≤400A/µs, VDD = 80% V(BR)DSS
Table 2.
Symbol
Thermal data
Value Parameter TO-220 DPAK/IPAK 2.78 62.5 300 Unit TO-220FP 6.25 °C/W °C/W °C
Rthj-case Rthj-amb Tl
Thermal resistance junction-case max Thermal resistance junction-amb max Maximum lead temperature for soldering purpos.