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SSN1N45B

Fairchild Semiconductor
Part Number SSN1N45B
Manufacturer Fairchild Semiconductor
Description 450V N-Channel MOSFET
Published Nov 3, 2008
Detailed Description SSN1N45B SSN1N45B 450V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transis...
Datasheet PDF File SSN1N45B PDF File

SSN1N45B
SSN1N45B

Overview
SSN1N45B SSN1N45B 450V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, com planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for electronic ballasts based on half bridge configuration.
Features • • • • • • 0.
5A, 450V, RDS(on) = 4.
25Ω @VGS = 10 V Low gate charge ( typical 6.
5 nC) Low Crss ( typical 6.
5 pF) 100% avalanche tested Improved dv/dt capability Gate-Source Voltage ± 50V g...


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