SFP95N03L

PRELIMINARY SemiWell Semiconductor SFP95N03L Logic N-Channel MOSFET Features ■ ■ Low RDS(on) (0.0085Ω )@VGS=10V Symbol 1. Gate ◀ { { 2. Drain Low Gate Charge (Typical 39nC) ■ Low Crss (Typical 185pF) ■ Improved dv/dt Capability www.DataSheet4U.com ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (175°C) ● ▲ ● ● { 3. Source General Description This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products. TO-220 1 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 3) (Note 1) (Note 6) Parameter Value 30 95 67.3 380 Units V A A A V mJ V/ns W W/°C °C °C ±20 450 7.0 150 1.0 - 55 ~ 175 300 Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal...