N-Channel MOSFET
SemiWell Semiconductor SanRex
Features
■ ■
SFP740
N-Channel MOSFET
Symbol
◀
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manufactured
High ruggedness RDS(on...
Description
SemiWell Semiconductor SanRex
Features
■ ■
SFP740
N-Channel MOSFET
Symbol
◀
{
● ●
manufactured
High ruggedness RDS(on) (Max 0.55 Ω )@VGS=10V Gate Charge (Typical 46nC) Improved dv/dt Capability, High ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)
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2. Drain
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1. Gate
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3. Source
General Description
This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topolgy like a electronic lamp ballast.
TO-220
1 2
3
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 1) (Note 3) (Note 1)
Parameter
Value
400 10 6.3 40
Units
V A A A V mJ mJ V/ns W W/°C °C °C
±30
680 12.5 5 125 1.0 - 55 ~ 150 300
Thermal Characteristics
Symbol
RθJC RθCS RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Si...
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