SFP60N03L

SemiWell Semiconductor SFP60N03L Logic N-Channel MOSFET Features ■ ■ Low RDS(on) (0.0135Ω )@VGS=10V Low Gate Charge (Typical 21.5nC) Low Crss (Typical 130pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C) Symbol ◀ { { 2. Drain ● www.DataSheet4U.com ■ ■ ■ ■ 1. Gate ▲ ● ● { 3. Source General Description This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products. TO-220 1 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 3) (Note 1) Parameter Value 30 60 43 240 Units V A A A V mJ V/ns W W/°C °C °C ±20 270 7.0 100 0.67 - 55 ~ 175 300 Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case ...