Darlington
2SD2082
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=12...
Darlington
2SD2082
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=4V, IC=8A IC=8A, IB=16mA IC=8A, IB=16mA VCE=12V, IE=–1A VCB=10V, f=1MHz 2SD2082 10max 10max 120min 2000min 1.5max 2.5max 20typ 210typ V V
16.2
Equivalent circuit
B
C
(2k Ω) (100 Ω) E
Silicon
NPN Triple Diffused Planar
Transistor (Complement to type 2SB1382) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2082 120 120 6 16(Pulse26) 1 75(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Driver for Solenoid, Motor and General Purpose
(Ta=25°C) Unit
External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6
µA
23.0±0.3
V
9.5±0.2
mA
a b
MHz pF
1.75 2.15 1.05 5.45±0.1 1.5 4.4
+0.2 -0.1
3.3
0.8
www.DataSheet4U.com sTypical Switching Characteristics (Common Emitter)
VCC (V) 40 RL (Ω) 5 IC (A) 8 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 16 IB2 (mA) –16 ton (µs) 0.6typ tstg (µs) 7.0typ tf (µs) 1.5typ
5.45±0.1 1.5
0.65 +0.2 -0.1
3.35
B
C
E
Weight : Approx 2.0g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
A
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (sa t) (V ) 3
I C – V BE Temperature Characteristics (Typical)
16 (V C E =4V)
A
26
40m
20
m 12
m
A
6mA
20 Collector Current I C (A)
3mA
2
1. 5m A
I C =16A 8A 1 4A
Collector Current I C (A)
12
8
)
)
Te
10
I B =1m A
emp
(Ca
se T
4
12
5˚C
(...
