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MBR2560CT

Sirectifier Semiconductors

(MBR25xxCT) Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

MBR2545CT thru MBR2560CT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C(TAB) A C A C A Dimensions T...


Sirectifier Semiconductors

MBR2560CT

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Description
MBR2545CT thru MBR2560CT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C(TAB) A C A C A Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 A=Anode, C=Cathode, TAB=Cathode www.DataSheet4U.com MBR2545CT MBR2550CT MBR2560CT Symbol I(AV) IFSM dv/dt VRRM V 45 50 60 VRMS V 31.5 35 42 VDC V 45 50 60 Characteristics Maximum Average Forward Rectified Current @TC=130oC Maximum Ratings 30 150 10000 IF=15A IF=15A IF=30A IF=30A @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC 0.65 0.75 1.0 50 1.5 450 -55 to +150 -55 to +175 Unit A A V/us Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Voltage Rate Of Change (Rated VR) Maximum Forward Voltage (Per Leg) At (Note 1) VF V IR ROJC CJ TJ TSTG Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) mA o C/W pF o o Typical Junction Capacitance Per Element (Note 3) Operating Temperature Range Storage Temperature Range C C NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. FEATURES *...




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