DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ449
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SJ449 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications. com PACKAGE DIMENSIONS
(in millimeters) 10. 0 ±0. 3 3. 2 ±0. 2 4. 5 ±0. 2 2. 7 ±0. 2
FEATURES
• Low On-Resistance
RDS(on) = 0. 8 Ω MAX. (@ VGS = –10 V, ID = –3. 0 A)
15. 0 ±0. 3 12. 0 ±0. 2 13. 5 MIN.
• Low Ciss Ciss = 1040 pF TYP. • High Avalanche Capability Ratings • Isolated TO-220 Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* VDSS VGSS ID(DC) ID(pulse) –250
m 30 m 6. 0 m 24
V V A A W W ˚C...