MRF5S21130HR3

Freescale Semiconductor Technical Data MRF5S21130H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 28 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 13.5 dB Efficiency — 26% IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 39 dBc in 3.84 MHz Channel Bandwidth www.DataSheet4U.com Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW Output Power Features Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection Lower Thermal Resistance Package Low Gold Plating Thickness on Leads, 40μ″ Nominal. RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S21130HR3 MRF5S21130HSR3 2110 - 2170 MHz, 28 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF5S21130HR3 CASE 465C - 02, STYLE 1 NI - 880S MRF5S21130HSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate...