CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD2150AT3
Spec. No. : C848T3 Issued Date : 2004.0...
CYStech Electronics Corp.
Low Vcesat
NPN Epitaxial Planar
Transistor
BTD2150AT3
Spec. No. : C848T3 Issued Date : 2004.07.01 Revised Date : 2017.05.09 Page No. : 1/6
Features
Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA Excellent current gain characteristics Complementary to BTB1424AT3 Pb-free lead plating and halogen-free package
Symbol
BTD2150AT3
Outline
TO-126
B：Base C：Collector E：Emitter
ECB
Ordering Information
Device BTD2150AT3-X-BL-X
Package
TO-126 (Pb-free lead plating package)
Shipping
200 pcs / bag, 3,000 pcs/box , 30,000 pcs/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, BL: bulk, 200 pcs/bag, 15 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
BTD2150AT3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C848T3 Issued Date : 2004.07.01 Revised Date : 2017.05.09 Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃)
Power Dissipation (TC=25℃)
Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP
PD
Tj Tstg
Limits
50 50 5 4 7 (Note) 1
10 150 -55~+150
Unit V V V A
W
°C °C
Note : Pulse test, pulse width≤380μs, duty cycle≤2%.
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, m...
