BTD2150AM3

CYStech Electronics Corp. Spec. No. : C848M3-A Issued Date : 2002.08.18 Revised Date : 2018.05.25 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BTD2150AM3 BVCEO IC RCE(SAT) typ. 50V 3A 125mΩ Features  Low VCE(sat), VCE(sat)=0.1 V (typical), at IC / IB = 1A / 50mA  Excellent current gain characteristics  Complementary to BTB1424AM3  Pb-free lead plating package Symbol BTD2150AM3 Outline SOT-89 B：Base C：Collector E：Emitter BCE Ordering Information Device BTD2150AM3-X-T2-G Package SOT-89 (Pb-free lead plating and halogen-free package) Shipping 1000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T2 :1000 pcs/tape & reel, 7” reel Product rank, zero for no rank products Product name BTD2150AM3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848M3-A Issued Date : 2002.08.18 Revised Date : 2018.05.25 Page No. : 2/7 Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating Junction Temperature Range Storage Temperature Range VCBO VCEO VEBO IC Pd Tj Tstg 80 50 6 3 0.6 1 2 -55~+150 -55~+150 *1 *2 Note : *1 Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm. *2 When mounted on a 40*40*0.7mm ceramic board. Unit V V V A W C C Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) ...