BTD2150AD3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C848D3 Issued Date : 2004.07.06 Revised Date : Page No. : 1/4 BTD2150AD3 Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA Excellent current gain characteristics www.DataSheet4U.com Complementary to BTB1424AD3 Symbol BTD2150AD3 Outline TO-126ML B：Base C：Collector E：Emitter EC B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Note : Pulse test, pulse width≤380µs, duty cycle≤2%. Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits 50 50 5 3 7 (Note) 1 10 150 -55~+150 Unit V V V A W °C °C BTD2150AD3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *V CE(sat) www.DataSheet4U.com *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 50 50 5 100 180 100 Typ. 0.25 90 45 Max. 1 1 0.5 2 820 Unit V V V µA µA V V MHz pF Spec. No. : C848D3 Issued Date : 2004.07.06 Revised Date : Page No. : 2/4 Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=40V, IE=0 VEB=3V, IC=0 IC=2A, IB=200mA IC=2A, IB=200mA VCE=2V, IC=20mA VCE=2V, IC=100mA VCE=2V, IC=1A VCE=5V, IC=100mA, f =100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 2 Rank Range R 180~390 S 270~560 T 390~820 Ch...