W20NM50FD

N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh™ Power MOSFET (with FAST DIODE) TYPE STW20NM50FD www.DataSheet4U.com s TYPICAL s s s s s STW20NM50FD VDSS 500V RDS(on) <0.25Ω ID 20 A RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS 3 2 1 TO-247 DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fastrecovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phaseshift converters. APPLICATIONS s ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 20 14 80 214 1.42 20 –65 to 150 150 (1)ISD ≤ 20A, di/dt ≤400A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. (*)Limited only by maximum temperature allowed Unit V V V A A A W W/°C V/ns °C °C ()Pulse width limited by safe operating area June 2002 1/8 STW20NM50FD THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case The...