STJ828M

Semiconductor STJ828M P-Channel Enhancement-Mode MOSFET Description High speed switching application. Analog switch application. Features -2.5V Gate drive. Low threshold voltage : Vth = -0.5~ -1.5V. www.DataSheet4U.com High speed. Ordering Information Type NO. STJ828M Marking J828 Package Code TO-92M Outline Dimensions 4.0±0.1 unit : mm 0.44 REF 0.52 REF 2.15 Typ. 11.85 Typ. 3.0±0.1 1.27 Typ. 2.54 ± 0.1. 14.0±0.40 2.3±0.1. PIN Connections 1. Source 2. Drain 3. Gate 0.7 Typ. 3.0±0.1 3.8 Min. 0.42 Typ. KST-I016-000 1 STJ828M Absolute maximum ratings Characteristic Drain-Source voltage Gate-Source voltage DC Drain current Drain Power dissipation Channel temperature Storage temperature range www.DataSheet4U.com (Ta=25°C) Symbol VDS VGSS ID PD Tch Tstg Ratings -20 ±7 -50 400 150 -55~150 Unit V V mA mW °C °C Electrical Characteristics Characteristic Drian-Source breakdown voltage Gate-Threshold voltage Drain cut-off current Gate leakage current Drain-Source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse Transfer capacitance Turn-on time Turn-off time (Ta=25°C) Symbol BVDSS Vth IDSS IGSS RDS(ON) ｜Yfs｜ Ciss Coss Crss tON tOFF Test Condition ID=-100µA, VGS=0 ID=-0.1mA, VDS=-3V VDS=-20V, VGS=0 VGS=±7V, VDS=0 VGS=-2.5V, ID=-10mA VDS=-3V, ID=-10mA VDS=-3V, VGS=0, f=1MHz VDS=-3V, VGS=0, f=1MHz VDS=-3V, VGS=0, f=1MHz VDD=-3V, ID=-10mA VGEN=0~-2.5V VDD=-3V, ID=-10mA VGEN=0~-2.5V Min. Typ. Max. -20 -0.5 -1.5 -1 ±1 4...