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MRF374

Advanced Semiconductor

NPN SILICON RF POWER TRANSISTOR

MRF374 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF374 is Designed for broadband commercial and industrial ...


Advanced Semiconductor

MRF374

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Description
MRF374 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF374 is Designed for broadband commercial and industrial applications in 470 to 860 MHz band. PACKAGE STYLE .230 BAL FLG. www.DataSheet4U.com FEATURES: PG = 13.5 dB typ. at 100 W/875 MHz ηD = 36 % Typical Omnigold™ Metalization System MAXIMUM RATINGS ID VDSS VGS PDISS TJ TSTG θJC 7.0 A 65 V ±20 V 270 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.65 °C/W CHARACTERISTICS SYMBOL VDSS IDSS IGSS VGS(th) VGS(Q) VDS(ON) GFS VDS = 28 V VGS = 20 V VDS = 10 V VDS = 28 V VDS = 10 V VDS = 10 V TC = 25 °C NONETEST CONDITIONS IDS = 1.0 µA MINIMUM TYPICAL MAXIMUM 65 1.0 1.0 UNITS V µA µA V V V S ID = 200 µA ID = 100 mA ID = 3.0 A ID = 3.0 A 2.0 3.0 2.2 3.5 4.2 0.56 2.8 4.0 5.0 0.8 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/2 MRF374 ERROR! REFERENCE SOURCE NOT FOUND. CHARACTERISTICS SYMBOL CISS COSS CRSS www.DataSheet4U.com P G TC = 25 °C NONETEST CONDITIONS VDS = 28 V VGS = 0 V f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 80 45 3.5 12.5 30 -28 13.5 36 -31 5:1 12 36 -34 UNITS pF ηD IMD VSWR PG ηD IMD VDD = 28 V IDQ = 400 mA f1 = 857 MHz, f2 = 863 MHz POUT = 100 W dB % dB --dB % dB VDD = 28 V IDQ = 500 mA f1 = 857 MHz, f2 = 863 MHz POUT = 100 W A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 9...




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