MRF327

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF327/D The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band Minimum Gain = 7.3 dB @ 400 MHz Built–In Matching Network for Broadband Operation Using Double Match Technique 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR www.DataSheet4U.com MRF327 80 W, 100 to 500 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON Gold Metallization System for High Reliability Applications Characterized for 100 to 500 MHz MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 33 60 4.0 9.0 12 250 1.43 – 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C CASE 316–01, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.7 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 80 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 80 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 8.0 mAdc, IC = 0) Collector–Base Br...