MRF326

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF326/D The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts Minimum Gain = 9.0 dB Built–In Matching Network for Broadband Operation 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR www.DataSheet4U.com MRF326 40 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON Gold Metallization System for High Reliability Applications MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 33 60 4.0 4.5 6.0 110 0.63 – 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C CASE 316–01, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 1.6 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 40 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 40 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 4.0 mAdc, IC = 0) Collector–Base Breakdown Voltage (IC = 40 mAdc, IE = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(...