(MT8VDDTxx64A) 184-Pin DDR Sdram Dimms
128MB, 256MB, 512MB (x64, SR) 184-PIN DDR SDRAM UDIMM
DDR SDRAM UNBUFFERED DIMM
Features
• 184-pin dual in-line memory ...
Description
128MB, 256MB, 512MB (x64, SR) 184-PIN DDR SDRAM UDIMM
DDR SDRAM UNBUFFERED DIMM
Features
184-pin dual in-line memory module (DIMM) Fast data transfer rates: PC2100 or PC2700 Utilizes 266 MT/s and 333 MT/s DDR SDRAM www.DataSheet4U.com components 128MB (16 Meg x 64), 256MB (32 Meg x 64), and 512MB (64 Meg x 64) VDD = VDDQ = +2.5V VDDSPD = +2.3V to +3.6V 2.5V I/O (SSTL_2 compatible) Commands entered on each positive CK edge DQS edge-aligned with data for READs; centeraligned with data for WRITEs Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle Bidirectional data strobe (DQS) transmitted/ received with data—i.e., source-synchronous data capture Differential clock inputs (CK and CK#) Four internal device banks for concurrent operation Programmable burst lengths: 2, 4, or 8 Auto precharge option Auto Refresh and Self Refresh Modes 15.625µs (128MB), 7.8125µs (256MB, 512MB) maximum average periodic refresh interval Serial Presence Detect (SPD) with EEPROM Programmable READ CAS latency Gold edge contacts
For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/modules
MT8VDDT1664A – 128MB MT8VDDT3264A – 256MB MT8VDDT6464A – 512MB
Figure 1: 184-Pin DIMM (MO-206)
Standard 1.25in. (31.75mm)
Low-Profile 1.15in. (29.21mm)
OPTIONS
MARKING
Package 184-pin DIMM (standard) G 1 Y 184-pin DIMM (lead-free) 2 Memory Clock/Speed, CAS Latency 6ns (167 MHz), 333 MT/s, CL = 2....
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