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SKIIP12AC12T4V1 Dataheets PDF



Part Number SKIIP12AC12T4V1
Manufacturers Semikron International
Logo Semikron International
Description IGBT
Datasheet SKIIP12AC12T4V1 DatasheetSKIIP12AC12T4V1 Datasheet (PDF)

SKiiP 12AC12T4V1 MiniSKiiP® 1 SKiiP 12AC12T4V1 Features • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised file no. E63532 Typical Applications* • Inverter up to 12 kVA • Typical motor power 5,5 kW Remarks • VCEsat , VF = chip level value • Case temp. limited to TC = 125°C max. (for baseplateless modules TC = TS) • product rel. results valid for Tj ≤ 150 (recomm. Top = -40 ... +150°C) Absolute M.

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SKiiP 12AC12T4V1 MiniSKiiP® 1 SKiiP 12AC12T4V1 Features • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised file no. E63532 Typical Applications* • Inverter up to 12 kVA • Typical motor power 5,5 kW Remarks • VCEsat , VF = chip level value • Case temp. limited to TC = 125°C max. (for baseplateless modules TC = TS) • product rel. results valid for Tj ≤ 150 (recomm. Top = -40 ... +150°C) Absolute Maximum Ratings Symbol Conditions Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM ICRM = 3 x ICnom VGES tpsc Tj VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C Inverse - Diode IF Tj = 175 °C Ts = 25 °C Ts = 70 °C IFnom IFRM IFRM = 3 x IFnom IFSM 10 ms, sin 180°, Tj = 150 °C Tj Module It(RMS) Tstg Tterminal = 80 °C, 20A per spring Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions Inverter - IGBT VCE(sat) IC = 15 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VCE0 Tj = 25 °C Tj = 150 °C rCE VGE = 15 V Tj = 25 °C Tj = 150 °C VGE(th) VGE = VCE, IC = 1 mA ICES VGE = 0 V Tj = 25 °C VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz QG - 8 V...+ 15 V RGint Tj = 25 °C td(on) tr Eon td(off) tf Eoff VCC = 600 V IC = 15 A RG on = 39  RG off = 39  di/dton = 400 A/µs di/dtoff = 200 A/µs VGE = +15/-15 V Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Rth(j-s) per IGBT Values 1200 18 18 15 45 -20 ... 20 10 -40 ... 175 23 18 15 45 65 -40 ... 175 20 -40 ... 125 2500 Unit V A A A A V µs °C A A A A A °C A °C V min. typ. max. Unit 1.85 2.10 V 2.25 2.45 V 0.8 0.9 V 0.7 0.8 V 70 80 m 103 110 m 5 5.8 6.5 V 0.1 0.3 mA mA 0.90 nF 0.08 nF 0.06 nF 85 nC 0.00  31 ns 30 ns 1.65 mJ 315 ns 66 ns 1.5 mJ 1.3 K/W AC © by SEMIKRON Rev. 3 – 02.12.2011 1 SKiiP 12AC12T4V1 MiniSKiiP® 1 SKiiP 12AC12T4V1 Features • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised file no. E63532 Typical Applications* • Inverter up to 12 kVA • Typical motor power 5,5 kW Remarks • VCEsat , VF = chip level value • Case temp. limited to TC = 125°C max. (for baseplateless modules TC = TS) • product rel. results valid for Tj ≤ 150 (recomm. Top = -40 ... +150°C) Characteristics Symbol Conditions Inverse - Diode VF = VEC IF = 15 A VGE = 0 V chiplevel VF0 rF IRRM Qrr Err Rth(j-s) Module Ms w IF = 15 A di/dtoff = 500 A/µs VGE = -15 V VCC = 600 V per Diode to heat sink Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Temperatur Sensor R100 R(T) TC=100°C (R25=1000) R(T)=1000[1+A(T-25°C)+B(T-25°C)2 ], A = 7.635*10-3 °C-1, B = 1.731*10-5 °C-2 min. 2 typ. 2.4 2.4 1.3 0.9 72 103 12 2 0.79 1.92 35 1670 ± 3% max. Unit 2.7 V 2.8 V 1.5 V 1..


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