Document
SHINDENGEN
HVX-2 Series Power MOSFET
N-Channel Enhancement type
2SK2671
( F5F90HVX2 )
900V 5A
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OUTLINE DIMENSIONS
Case : FTO-220 (Unit : mm)
FEATURES •œ Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. •œ The static Rds(on) is small. •œ The switching time is fast. •œ Avalanche resistance guaranteed. APPLICATION
•œ Switching power supply of AC 240V input
•œ High voltage power supply •œ Inverter
RATINGS
•œAbsolute Maximum Ratings • Tc i = 25•Ž•j Item Symbol Conditions Ratings Storage Temperature Tstg -55•`150 Channel Temperature Tch 150 Drain-Source Voltage VDSS 900 Gate-Source Voltage VGSS •}30 ID 5 Continuous Drain Current• DC•j i Continuous Drain Current• Peak) i IDP Pulse width•…10ƒÊs, Duty cycle•…1/100 10 Continuous Source Current• DC•j i IS 5 Total Power Dissipation PT 40 Repetitive Avalanche Current IAR Tch= 150•Ž 5 Single Avalanche Energy EAS Tch= 25•Ž 100 Repetitive Avalanche Energy EAR Tch= 25•Ž 10 Dielectric Strength Vdis Terminals to case,• @ AC 1 minute 2 Mounting Torque TOR • i Recommended torque • F 0.3 N¥m •j 0.5 Unit •Ž V
A W A mJ kV N¥m
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
HVX-2 Series Power MOSFET
●Electrical Characteristics Tc = 25℃ Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Transconductance Static Drain-Source On-state Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage θjc Thermal Resistance Total Gate Charge Qg www.DataSheet4U.com Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff Conditions
2SK2671 ( F5F90HVX2 )
Min. 900 Typ. Max. 250 ±0.1 2.4 2.5 4.0 2.1 3.0 Unit V μA S Ω V
ID = 1mA, VGS = 0V VDS = 900V, VGS = 0V VGS = ±30V, VDS = 0V ID = 2.5A, VDS = 10V ID = 2.5A, VGS = 10V ID = 1mA, VDS = 10V IS = 2.5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 5A VDS = 25V, VGS = 0V, f = 1MHZ ID = 2.5A, RL = 60Ω, VGS = 10V
45 1140 23 105 55 210
2.8 3.5 1.5 3.12 ℃/W nC pF 100 350 ns
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2671
10
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Transfer Characteristics
Tc = − 55 °C 25 °C 8
Drain Current ID [A]
6
100 °C 150 °C
4
2 VDS = 25V TYP 0 0 5 10 15 20
Gate-Source Voltage VGS [V]
2SK2671
100
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Static Drain-Source On-state Resistance
Static Drain-Source On-state Resistance RDS(ON) [Ω]
10
ID = 2.5A
1
0.1
VGS = 10V pulse test TYP -50 0 50 100 150
Case Temperature Tc [°C]
2SK2671
6
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Gate Threshold Voltage
5
Gate Threshold Voltage VTH [V]
4
3
2
1 VDS = 10V ID = 1mA TYP -50 0 50 100 150
0
Case Temperature Tc [°C]
2SK2671
10
Safe Operating Area
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100 µs 200 µs 1
Drain Current ID [A]
R DS(ON) limit
1ms
10ms 0.1
DC
Tc = 25°C Single Pulse 0.01 1 10 100 1000
Drain-Source Voltage VDS [V]
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2SK2671
Transient Thermal Impedance
10
1
Transient Thermal Impedance θjc(t) [°C/W]
0.1
0.01 10-4 10-2
10-3
10-1
100
101
102
Time t [s]
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2SK2671
100
Single Avalanche Energy Derating
Single Avalanche Energy Derating [%]
80
60
40
20
0
0
50
100
150
Starting Channel Temperature Tch [°C]
2SK2671
10000
Capacitance
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Ciss 1000
Capacitance Ciss Coss Crss [pF]
100
Coss
Crss
10
f=1MHz Ta=25 °C TYP 1 0 20 40 60 80 100
Drain-Source Voltage VDS [V]
2SK2671
Single Avalanche Current - Inductive Load
VDD = 100V VGS = 15V → 0V Rg = 60 Ω IAS = 5A
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10
Single Avalanche Current IAS [A]
EAR = 10mJ
EAS = 100mJ
1 0.1 1
10
100
Inductance L [mH]
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2SK2671
100
Power Derating
80
Power Derating [%]
60
40
20
0
0
50
100
150
Case Temperature Tc [°C]
2SK2671
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Gate Charge Characteristics
20
500
VDS
Drain-Source Voltage VDS [V]
VDD = 400V 200V 300 100V
VGS
15
10 200
5 100 ID = 5A TYP 0 0 20 40 60 80 0 100
Gate Charge Qg [nC]
Gate-Source Voltage VGS [V]
400
.