N-Channel Enhancement-Mode MOSFET
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200518 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. :...
Description
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200518 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 1/5
H45N03E
N-Channel Enhancement-Mode MOSFET (25V, 45A)
H45N03E Pin Assignment
Tab
Features
RDS(on)=15mΩ@VGS=10V, ID=25A RDS(on)=20mΩ@VGS=4.5V, ID=25A www.DataSheet4U.com Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance Specially Designed for DC/DC Converters and Motor Drivers Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM
1 2 3
3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source
D G S
Internal Schematic Diagram
Maximum Ratings & Thermal Characteristics
(TA=25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current *1 Maximum Power Dissipation @ TC=25oC Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulse ID=35A, VDD=20V, L=0.14mH Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance(PCB mounted)*2
*1: Maximum DC current limited by the package. *2: 1-in2 2oz Cu PCB board
Symbol VDS VGS ID IDM PD TJ,Tstg EAS RθJC RθJA
Value 25 ±20 45 180 60 -55 to 150 300 2.1 55
Units V V A A W
o
C
mJ
O O
C/W C/W
Switching Test Circuit
VDD
Switching Waveforms
ton td(on) toff tr td(off) 90% tf 90 %
VIN VGEN RG G
D
VOUT
Output, VOUT
10%
10%
Inverted
90% 50% 50%
S
Input, VIN
10%
Pulse Width
H45N03E
HSMC Product Specifi...
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