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S5817 Dataheets PDF



Part Number S5817
Manufacturers Galaxy Semi-Conductor
Logo Galaxy Semi-Conductor
Description (S5817 - S5819) SCHOTTKY BARRIER RECTIFIER
Datasheet S5817 DatasheetS5817 Datasheet (PDF)

BL GALAXY ELECTRICAL SCHOTTKY BARRIER RECTIFIER FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications www.DataSheet4U.com The plastic material S5817- - -S5819 VOLTAGE RANGE: 20 --- 40 V CURRENT: 1.0 A SMA(DO-214AC) carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO--214AC,molded plastic Term.

  S5817   S5817



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BL GALAXY ELECTRICAL SCHOTTKY BARRIER RECTIFIER FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications www.DataSheet4U.com The plastic material S5817- - -S5819 VOLTAGE RANGE: 20 --- 40 V CURRENT: 1.0 A SMA(DO-214AC) carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO--214AC,molded plastic Terminals: Solderable per MIL- STD-202,method 208 Polarity: Color band denotes cathode Weight: 0.002 ounces, 0.064 gram Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. S5817 Device marking code Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current @TL =90 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage @ 1.0A z (Note 1) @ 3.0A Maximum reverse current at rated DC blocking voltage Typical junction capacitance Typical thermal resistance @TA =25 @TA =100 (Note2) (Note3) S5818 S18 30 21 30 1.0 S5819 S19 40 28 40 UNITS V V V A S17 V RRM V RMS VDC IF(AV) 20 14 20 IFSM 0.45 0.75 25 A VF IR CJ Rθ JA TJ TSTG 0.55 0.875 1.0 10 110 50 - 55 ---- + 125 - 55 ---- + 150 0.60 0.90 V mA pF /W Operating junction temperature range Storage temperature range NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle. www.galaxycn.com 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. 3.Thermal resistance junction to ambient Document Number 0281040 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES S5817 - - - S5819 FIG.1 -- FORWARD DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT PEAK FORWARD SURGE CURRENT AMPERES FIG.2 -- PEAK FORWARD SURGE CURRENT 1.0 30 25 20 25 10 5 0 1 10 100 TJ=TJMAX 8.3ms Single Half Sine-Wave 0.75 AMPERES www.DataSheet4U.com 0.5 0.25 Resistive or Inductive Load 0.375"(9.5mm)Lead Length 0 0 25 50 75 100 125 150 LEAD TEMPERATURE, NUMBER OF CYCLES AT 60Hz FIG.3 -- TYPICAL INSTANTANEOUS FORWARD X -CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT FIG.4 -- TYPICAL JUNCTION CAPACITANCE 20 400 CAPACITANCE, pF 10 S 5 81 7 S 5 81 9 TJ=25¡æ f=1.0MHz Vsig=50mVp-p AMPERES 100 1 S 5 81 8 T J = 25 P ulse w id th= 300 1 % D uty C yc le s 10 0.1 1 10 100 .1 .1 .3 .5 .7 .9 1.1 1.3 1.5 1.7 1.9 2.1 INSTANTANEOUS FORWARD VOLTAGE, VOLTS REVERSE VOLTAGE,VOLTS www.galaxycn.com Document Number 0281040 BLGALAXY ELECTRICAL 2. .


TIP250 S5817 S5820


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