D1351

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1351 DESCRIPTION ¡¤ With TO-220C package ¡¤ Complement to type 2SB988 ¡¤ Low saturation voltage : VCE(sat)=1.0V(Max.)(IC=2.0A,IB=0.2A) APPLICATIONS ¡¤ ¡¤ For general purpose application PINNING www.DataSheet4U.com PIN 1 2 3 Base DESCRIPTION Collector;connected to mounting base Emitter Maximum absolute ratings(Ta=25¡æ ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25¡æ Collector dissipation TC=25¡æ Junction temperature Storage temperature 30 150 -50~150 ¡æ ¡æ Open emitter Open base Open collector CONDITIONS VALUE 60 60 7 3 0.5 2 W UNIT V V V A A JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Emitter-base on voltage Collector cut-off current Emitter cut-off current CONDITIONS IC=50mA; IB=0 IC=2A; IB=0.2A IC=0.5A ; VCE=5V VCB=60V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=5V IE=0; VCB=10V,f=1MHz IC=0.5A ; VCE=5V 60 35 3.0 MIN 60 0.25 0.7 TYP. SYMBOL VCEO VCEsat VBE ICBO IEBO 2SD1351 MAX UNIT V 1.0 1.0 0.1 0.1 300 V V mA mA hFE DC current gain www.DataSheet4U.com Cob fT Output capacitance Transition frequency pF MHz Switching times ton tstg tf Turn-on time Storage time Fall time IB1=-IB2=0.2A VCC=30V;RL=15¦¸ Duty cycle¡Ü 1% 0.65 1.30 0.6...