MS2176

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2176 RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS Features 350 WATTS @ 10µ SEC PULSE WIDTH, 10% DUTY 300 WATTS @ 250µ SEC PULSE WIDTH 10% DUTY CYCLE 9.5 DB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS INFINITE VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS www.DataSheet4U.com CYCLE DESCRIPTION: The MS2176 is a gold metallized silicon NPN pulse power transistor designed for applications requiring high peak power and low duty cycles within the frequency range of 400 – 500 MHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 21.6 875 +200 -65 to +150 V V V A W °C °C Thermal Data RTH(j-c) Junction-Case Thermal Resistance 0.2 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS2176 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC Symbol Test Conditions Min. Value Typ. Max. Units BVCBO BVCES www.DataSheet4U.com BVCEO BVEBO ICES hFE IC = 50 mA IC = 50 mA IC = 50 mA IE = 10 mA VCE =30 V VCE = 5 V IE = 0 mA VBE = 0 V IB = 0 mA IC ...