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SSM3K309T
Silicon N-Channel MOSFET
Description
SSM3K309T TOSHIBA Field-Effect
Transistor
Silicon N-Channel MOS Type SSM3K309T ○ Power Management Switch Applications ○ High-Current Switching Applications 1.8V drive Low on-resistance : Ron = 47mΩ (max) (@VGS = 1.8V) : Ron = 35mΩ (max) (@VGS = 2.5V) : Ron = 31mΩ (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristic Symbol ...
Toshiba Semiconductor
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