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SSM3K303T Dataheets PDF



Part Number SSM3K303T
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet SSM3K303T DatasheetSSM3K303T Datasheet (PDF)

SSM3K303T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K303T High Speed Switching Applications • 4 V drive • Low ON-resistance: Ron = 120 mΩ (max) (@VGS = 4V) Ron = 83 mΩ (max) (@VGS = 10V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristic Symbol Rating Unit Drain–source voltage VDS 30 V Gate–source voltage VGSS ± 20 V Drain current DC ID Pulse IDP 2.9 A 5.8 Drain power dissipation PD (Note 1) 700 mW Channel temperature Tch 150 °C Stor.

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