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SSM3K04FE

Toshiba Semiconductor
Part Number SSM3K04FE
Manufacturer Toshiba Semiconductor
Description High Speed Switching Applications
Published Sep 11, 2008
Detailed Description SSM3K04FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FE High Speed Switching Applications • • • ...
Datasheet PDF File SSM3K04FE PDF File

SSM3K04FE
SSM3K04FE

Overview
SSM3K04FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FE High Speed Switching Applications • • • • With built-in gate-source resistor: RGS = 1 MΩ (typ.
) 2.
5 V gate drive Low gate threshold voltage: Vth = 0.
7~1.
3 V Small package Unit: mm com Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD Tch Tstg Rating 20 10 100 100 150 −55~150 Unit V V mA mW °C °C JEDEC ― Note: JEITA ― Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in T...


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