SSM3K03TE

SSM3K03TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03TE High Speed Switching Applications Analog Switch Applications 2.5 V gate drive High input impedance Low gate threshold voltage: Vth = 0.7~1.3 V Unit: mm 1.2±0.05 0.32±0.05 ３ 0.14±0.05 0.8±0.05 0.45 0.45 1.4±0.05 0.9±0.1 １ ２ www.DataSheet4U.com Small package 0.59±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD Tch Tstg Rating 20 10 100 100 150 −55~150 Unit V V mA mW °C °C 1. Gate 2. Source 3. Drain TESM JEDEC ― Note: JEITA ― Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-1B1B temperature, etc.) may cause this product to decrease in the Weight: 0.0022g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Equivalent Circuit 1 2007-11-01 SSM3K03TE Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current ...