SPG1316E-H

Semiconductor SPG1316E-H High Brightness Chip LED Features 1.6mm(L)×0.8mm(W) small size surface mount type Thin package of 0.55mm(H) thickness Transparent clear lens optic Low power consumption type chip LED Emitting light green (530nm) E ; ESD www.DataSheet4U.com Protected (±2.0KV, 3 Times @100pF, 1.5KΩ) Applications LCD backlighting Keypad backlighting Symbol backlighting Front panel indicator lamp Outline Dimensions unit : mm KSD-O8G011-001 1 SPG1316E-H Absolute Maximum Ratings Characteristic Power dissipation Forward current * Peak forward current Operating temperature range Storage temperature range 2 1 (Ta=25oC) Symbol PD IF IFP Topr Tstg Rating 64 20 50 -25∼80 -30∼100 Unit mW mA mA ℃ ℃ www.DataSheet4U.com 240℃ for 10 seconds * Soldering temperature Tsol *1. Duty ratio = 1/16, Pulse width = 0.1ms *2. Recommended reflow soldering temperature profile - Preheating 150℃ to 185℃ within 120 seconds soldering 240℃ within 10 seconds Gradual cooling (Avoid quenching) Temp (℃) 240 Peak Temp max. 240℃ Preheating area 150~185℃, 90±30sec 185 150 max. 3℃/sec max. 4℃/sec Time from 25℃ to Peak Temperature max. 6min 0 60 150 180 240 Time (sec) max. -6℃/sec max. 10sec Solder area 220℃, max. 60sec 25 Electrical / Optical Characteristics Characteristic Forward voltage (Ta=25oC) Symbol VF IV Test Condition IF= 5mA IF= 5mA IF= 5mA IF= 5mA Min 2.6 33 524 - Typ 35 ±65 ±70 Max 3.2 95 536 - Unit V mcd nm nm deg *4Luminous intensity Peak wavelength S...