Power Transistors
2SC3975
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching ■ Fe...
Power
Transistors
2SC3975
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching ■ Features
(0.7)
15.0±0.3 11.0±0.2
Unit: mm 5.0±0.2
(3.2)
21.0±0.5 15.0±0.2
High-speed switching High collector-base voltage (Emitter open) VCBO
φ 3.2±0.1
Wide safe operation area Satisfactory linearity of forward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw
2.0±0.2
2.0±0.1
/ ■ Absolute Maximum Ratings TC = 25°C
16.2±0.5 (3.5)
Solder Dip
1.1±0.1
0.6±0.2
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
800
V
c e. d ty Collector-emitter voltage (E-B short) VCES
800
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
500
V
a e cle con Emitter-base voltage (Collector open) VEBO
8
V
lifecy , dis Base current
IB
5
A
n u duct typed Collector current
IC
10
A
te tin Pro ed Peak collector current
ICP
20
A
ur tinu Collector power dissipation
PC
100
W
ing fo iscon Ta = 25°C
3.0
in n follow ed d Junction temperature
Tj
150
°C
s lan Storage temperature
Tstg −55 to +150 °C
5.45±0.3 10.9±0.5
123
1: Base 2: Collector 3: Emitter EIAJ: SC-92 TOP-3F-A1 Package
a coed inclucdeetype, p ■ Electrical Characteristics TC = 25°C ± 3°C
M is ntinu tenan Parameter
Symbol
Conditions
isco ain Collector-emitter voltage (Base open) e/D e, m Collector-base cutoff current (Emitter open)
D nanc e typ Emitter-base cutoff current (Collector ...
