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TA32910Q Dataheets PDF



Part Number TA32910Q
Manufacturers Dynex Semiconductor
Logo Dynex Semiconductor
Description Asymmetric Thyristor
Datasheet TA32910Q DatasheetTA32910Q Datasheet (PDF)

TA329..Q TA329..Q Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4680-2.1 DS4680-3.0 January 2000 APPLICATIONS s High Frequency Applications s High Power Choppers And Inverters s Welding s Ultrasonic Generators s Induction Heating s 400Hz UPS KEY PARAMETERS VDRM 1400V IT(RMS) 370A ITSM 2000A dVdt 1000V/µs dI/dt 1000A/µs tq 7.0µs www.DataSheet4U.com s PWM Inverters FEATURES s Low Loss Asymmetrical Diffusion Structure s High Interdigitated Amplifying Gate s Gate Assist.

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TA329..Q TA329..Q Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4680-2.1 DS4680-3.0 January 2000 APPLICATIONS s High Frequency Applications s High Power Choppers And Inverters s Welding s Ultrasonic Generators s Induction Heating s 400Hz UPS KEY PARAMETERS VDRM 1400V IT(RMS) 370A ITSM 2000A dVdt 1000V/µs dI/dt 1000A/µs tq 7.0µs www.DataSheet4U.com s PWM Inverters FEATURES s Low Loss Asymmetrical Diffusion Structure s High Interdigitated Amplifying Gate s Gate Assisted Turn-off With Exclusive Bypass Diode s Fully Characterised For Operation up to 40kHz s Directly Compatible With 220-480 A.c. Mains VOLTAGE RATINGS Type Number Repetitive Peak Off-state Voltage VDRM V 1400 1200 1000 Repetitive Peak Reverse Voltage VRRM V 10 10 10 TA329 14 Q TA329 12 Q TA329 10 Q Lower voltage grades available. Outline type code: MU86. See Package Details for further information. CURRENT AND SURGE RATINGS Symbol Double Side Cooled IT(RMS) ITSM I2t RMS value Surge (non-repetitive) on-state current I2t for fusing Half sine wave, duty cycle 50%, Tcase = 80oC, Tj = 125˚C. Tj = 125oC, tp = 1ms, VR = 0 tp ≥ 10ms 370 2000 20 x 103 A A A2s Parameter Conditions Max. Units 1/10 TA329..Q THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 4.0kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) stg www.DataSheet4U.com Min. dc Anode dc -40 3.6 Max. 0.085 0.153 0.204 0.02 0.04 135 125 150 4.4 Units o C/W o C/W C/W C/W C/W o o Double side Single side o Rth(c-h) Thermal resistance - case to heatsink o C o C C T Storage temperature range o - Clamping force kN DYNAMIC CHARACTERISTICS Symbol VTM IRRM IDRM dV/dt dI/dt Parameter Maximum on-state voltage Peak reverse current Off-state current Maximum linear rate of rise of off-state voltage Rate of rise of on-state current Conditions At 600A peak, Tcase = 125oC At VRRM, Tcase = 125oC At VDRM, Tcase = 125oC To 60% VDRM Tj = 125oC, Gate open circuit Gate source 20V, 20Ω tr ≤ 5µs. Non-repetitive Repetitive tq† Max. gate assisted turn-off time (with feedback diode) Tj = 125oC, IT(PK) = 200A, tp = 25µs (half sine wave), VR = DF451 Diode voltage drop, dV/dt = 600V/µs (linear to 60% VDRM), VGK = -5V Tj = 125oC, ITM = 100A, tp > 100µs, dIR/dt = 30A/µs, VR = 1V, dV/dt = 600V/µs (linear to 60% VDRM), Gate open. Min. Max. 2.5 30 1 1000 1000 500 7 Units V mA mA V/µs A/µs A/µs µs tq Max. turn-off time (with feedback diode) - 10 µs 2/10 TA329..Q GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol VGT IGT VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Peak reverse gate voltage Peak forward gate current Peak gate power Average gate power Conditions VDWM = 12V, RL = 3Ω, Tcase = 25oC VDWM = 12V, RL = 3Ω, Tcase = 25oC Typ. Max. 4 250 7 10 50 15 Units V mA V A W W www.DataSheet4U.com 3/10 TA329..Q CURVES www.DataSheet4U.com Notes: 1. VD ≤ 600V. 2. VR = DF451 Diode voltage drop. 3. R.C. snubber. C = 0.1µF, R = 33Ω. 4. Double side cooled. Fig.1 Energy per pulse for sinusoidal pulses. Notes: 1. VD ≤ 600V. 2. VR = DF451 Diode voltage drop. 3. R.C. snubber. C = 0.1µF, R = 33Ω. 4. Double side cooled. Fig.2 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C. 4/10 TA329..Q www.DataSheet4U.com Notes: 1. VD ≤ 600V. 2. VR = DF451 Diode voltage drop. 3. R.C. snubber. C = 0.1µF, R = 33Ω. 4. Double side cooled. Fig.3 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C. Notes: 1. dI/dt = 100A/µs. 2. VD ≤ 600V. 3. VR = DF451 Diode voltage drop. 4. R.C. snubber. C = 0.1µF, R = 33Ω. 5. Double side cooled. Fig.4 Energy per pulse for trapezoidal pulses 5/10 TA329..Q www.DataSheet4U.com Notes: 1. dI/dt = 100A/µs. 2. VD ≤ 600V. 3. VR = DF451 Diode voltage drop. 4. R.C. snubber. C = 0.1µF, R = 33Ω. 5. Double side cooled. Fig.5 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C. Notes: 1. dI/dt = 100A/µs. 2. VD ≤ 600V. 3. VR = DF451 Diode voltage drop. 4. R.C. snubber. C = 0.1µF, R = 33Ω. 5. Double side cooled. Fig.6 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C. 6/10 TA329..Q www.DataSheet4U.com Fig.7 Maximum on-state conduction characteristic Fig.8 Non-repetitive sub-cycle surge on-state current and I2t rating. Fig.9 Typical variation of effective turn-off time (tq†) with negative gate bias. Fig.10 Reverse gate characteristics 7/10 TA329..Q www.DataSheet4U.com Fig.11 Gate trigger characteristics Fig.12 Transient thermal impedance - junction to case 8/10 TA329..Q PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes 3.6 x 2.0 deep (in both electrodes) 6.3 Cathode tab Cathode www.DataSheet4U.com Ø 42 max Ø19nom Ø1.5 Gate Ø19nom Ø 38 max Anode Nominal weigh.


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