Document
TA329..Q
TA329..Q
Asymmetric Thyristor Advance Information
Replaces March 1998 version, DS4680-2.1 DS4680-3.0 January 2000
APPLICATIONS
s High Frequency Applications s High Power Choppers And Inverters s Welding s Ultrasonic Generators s Induction Heating s 400Hz UPS
KEY PARAMETERS VDRM 1400V IT(RMS) 370A ITSM 2000A dVdt 1000V/µs dI/dt 1000A/µs tq 7.0µs
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FEATURES
s Low Loss Asymmetrical Diffusion Structure s High Interdigitated Amplifying Gate s Gate Assisted Turn-off With Exclusive Bypass Diode s Fully Characterised For Operation up to 40kHz s Directly Compatible With 220-480 A.c. Mains
VOLTAGE RATINGS
Type Number Repetitive Peak Off-state Voltage VDRM V 1400 1200 1000 Repetitive Peak Reverse Voltage VRRM V 10 10 10
TA329 14 Q TA329 12 Q TA329 10 Q
Lower voltage grades available.
Outline type code: MU86. See Package Details for further information.
CURRENT AND SURGE RATINGS
Symbol Double Side Cooled IT(RMS) ITSM I2t RMS value Surge (non-repetitive) on-state current I2t for fusing Half sine wave, duty cycle 50%, Tcase = 80oC, Tj = 125˚C. Tj = 125oC, tp = 1ms, VR = 0 tp ≥ 10ms 370 2000 20 x 103 A A A2s Parameter Conditions Max. Units
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THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 4.0kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking)
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Min. dc Anode dc -40 3.6
Max. 0.085 0.153 0.204 0.02 0.04 135 125 150 4.4
Units
o
C/W
o
C/W C/W C/W C/W
o
o
Double side Single side
o
Rth(c-h)
Thermal resistance - case to heatsink
o
C
o
C C
T
Storage temperature range
o
-
Clamping force
kN
DYNAMIC CHARACTERISTICS
Symbol VTM IRRM IDRM dV/dt dI/dt Parameter Maximum on-state voltage Peak reverse current Off-state current Maximum linear rate of rise of off-state voltage Rate of rise of on-state current Conditions At 600A peak, Tcase = 125oC At VRRM, Tcase = 125oC At VDRM, Tcase = 125oC To 60% VDRM Tj = 125oC, Gate open circuit Gate source 20V, 20Ω tr ≤ 5µs. Non-repetitive Repetitive tq† Max. gate assisted turn-off time (with feedback diode) Tj = 125oC, IT(PK) = 200A, tp = 25µs (half sine wave), VR = DF451 Diode voltage drop, dV/dt = 600V/µs (linear to 60% VDRM), VGK = -5V Tj = 125oC, ITM = 100A, tp > 100µs, dIR/dt = 30A/µs, VR = 1V, dV/dt = 600V/µs (linear to 60% VDRM), Gate open. Min. Max. 2.5 30 1 1000 1000 500 7 Units V mA mA V/µs A/µs A/µs µs
tq
Max. turn-off time (with feedback diode)
-
10
µs
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GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT IGT VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Peak reverse gate voltage Peak forward gate current Peak gate power Average gate power Conditions VDWM = 12V, RL = 3Ω, Tcase = 25oC VDWM = 12V, RL = 3Ω, Tcase = 25oC Typ. Max. 4 250 7 10 50 15 Units V mA V A W W
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CURVES
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Notes: 1. VD ≤ 600V. 2. VR = DF451 Diode voltage drop. 3. R.C. snubber. C = 0.1µF, R = 33Ω. 4. Double side cooled.
Fig.1 Energy per pulse for sinusoidal pulses.
Notes: 1. VD ≤ 600V. 2. VR = DF451 Diode voltage drop. 3. R.C. snubber. C = 0.1µF, R = 33Ω. 4. Double side cooled.
Fig.2 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C.
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Notes: 1. VD ≤ 600V. 2. VR = DF451 Diode voltage drop. 3. R.C. snubber. C = 0.1µF, R = 33Ω. 4. Double side cooled.
Fig.3 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C.
Notes: 1. dI/dt = 100A/µs. 2. VD ≤ 600V. 3. VR = DF451 Diode voltage drop. 4. R.C. snubber. C = 0.1µF, R = 33Ω. 5. Double side cooled.
Fig.4 Energy per pulse for trapezoidal pulses
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Notes: 1. dI/dt = 100A/µs. 2. VD ≤ 600V. 3. VR = DF451 Diode voltage drop. 4. R.C. snubber. C = 0.1µF, R = 33Ω. 5. Double side cooled.
Fig.5 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C.
Notes: 1. dI/dt = 100A/µs. 2. VD ≤ 600V. 3. VR = DF451 Diode voltage drop. 4. R.C. snubber. C = 0.1µF, R = 33Ω. 5. Double side cooled.
Fig.6 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C.
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Fig.7 Maximum on-state conduction characteristic
Fig.8 Non-repetitive sub-cycle surge on-state current and I2t rating.
Fig.9 Typical variation of effective turn-off time (tq†) with negative gate bias.
Fig.10 Reverse gate characteristics
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Fig.11 Gate trigger characteristics
Fig.12 Transient thermal impedance - junction to case
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TA329..Q PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
2 holes 3.6 x 2.0 deep (in both electrodes)
6.3
Cathode tab Cathode
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Ø 42 max Ø19nom
Ø1.5 Gate Ø19nom Ø 38 max
Anode
Nominal weigh.