MRUS51S

New Product DATA SHEET MR Sensor MRUS51S Micro power Built-in IC ultra-minimum MR sensor 1.FEATURES High-sensitivity (1.5mT(typ.) ) & Ultra-minimum Size & Low source supply *Micro power (6µW(typ):Vcc=1.8V) (suited for battery-operation) *Ultra-small size www.DataSheet4U.com 1.Dimension (Unit:mm) MR(Magneto-resistance)sensor z Volume and mounting area are 70% smaller than MRSS22L. * Height is about 50 % lower than MRSS22L. *Operating in one way magnetic field *Operating with independent pole (easily manufacture) *Superior Temperature stability *Lead free goods Gnd 1.45 1.2 Vcc Out 1.4 Max0.55 2.Fundamental Operation 2-1.Direction of Magnetic Field 2-2.Circuit Block ‚u‚ƒ‚ƒ ‚q1 ‚q2 SAMPLING LOGIC LATCH C-MOS Operation ‚n‚t‚s Op-Amp ‚q3 ‚q4 SWITCH R1 ` R 4 F MR Elements ‚f‚m‚c 2-3.Performance Characteristics (25+3 ˚C) Operating require Condition When power switch is ON When magnetic field is applied When magnetic field is applied H = 0 mT (Magnetic Flux Density) H † H … 2.2 mT (Magnetic Flux Density) 0.5 mT (Magnetic Flux Density) Output Voltage Hi-level Lo-level Hi-level New Product DATA SHEET MR Sensor MRUS51S 3.Performance 3-1.Operating Conditions Recommended (Ta = 25+3 ˚C unless otherwise specified) Item Supply Voltage www.DataSheet4U.com Output VOH Condition Vcc=1.8V Vcc=1.8V Iout=1mA VCC=1.8V Iout=-1mA 25+3˚C Min 1.6 -40 1.6 - Std 1.8 3 25 1.5 (1.4) - Max 3.5 85 0.2 Unit V µA ºC Supply Current Ambient Temperature Output Voltage V V mT(*1 ...