ULTRA HIGH SPEED 16K X 1 STATIC CMOS RAMS
P4C167/P4C167L ULTRA HIGH SPEED 16K X 1 STATIC CMOS RAMS
FEATURES
Full CMOS, 6T Cell High Speed (Equal Access and Cycle ...
Description
P4C167/P4C167L ULTRA HIGH SPEED 16K X 1 STATIC CMOS RAMS
FEATURES
Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military)
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Separate Data I/O Three-State Output TTL Compatible Output Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved) – 20-Pin 300 mil DIP – 20-Pin 300 mil SOJ – 20-Pin LCC
Low Power Operation Single 5V±10% Power Supply Data Retention with 2.0V Supply (P4C167L Military)
DESCRIPTION
The P4C167/L are 16,384-bit high speed static RAMs organized as 16K x 1. The CMOS memories require no clocks or refreshing and have equal access and cycle times. The RAMs operate from a single 5V ± 10% tolerance power supply. Data integrity is maintained for supply voltages down to 2.0V, typically drawing 10µA. Access times as fast as 10 nanoseconds are available, greatly enhancing system speeds. CMOS reduces power consumption to low levels. The P4C167/L are available in 20-pin 300 mil DIP, 20-pin 300 mil SOJ, and 20-pin LCC packages providing excellent board level densities.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATIONS
DIP (P2, C6) SOJ (J2) SIMILAR
LCC (L9)
Document # SRAM106 REV A 1 Revised October 2005
P4C167
MAXIMUM RATINGS(1)
Symbol VCC Parameter Power Supply Pin with Respect to GND Terminal Voltage with Respect to GND (up to 7.0V) Operating Temperature Value –0.5 to +7 –0.5 to VCC +0.5 –55 to +125 Unit V Symbol TBIAS TSTG PT IOUT Parameter Te...
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