SI1301DL

Si1301DL New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) 3.8 @ VGS = –4.5 V 5.0 @ VGS = –2.5 V ID (mA) –180 –100 www.DataSheet4U.com SOT-323 SC-70 (3-Leads) Marking Code LG 3 S 2 D XX YY Lot Traceability and Date Code Part # Code G 1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM PD TJ, Tstg Limit –20 "8 –180 –140 –500 0.15 0.10 –55 to 150 Unit V mA A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Symbol RthJA Limit 833 Unit _C/W Document Number: 71302 S-01830—Rev. A, 21-Aug-00 www.vishay.com 1 Si1301DL Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VDS = 0 V, ID = –10 mA VDS = VGS, ID = –50 mA VDS = 0 V, VGS = "8 V VDS = –20 V, VGS = 0 V VDS = –20 V, VGS = 0 V, TJ = 55_C VGS w –4.5 V, VDS = –8.0 V VGS w –2.5 V, VDS = –5.0 V VGS = –4.5 V, ID = –180 mA rDS(on) DS( ) gfs VSD VGS = –2.5 V, ID = –400 mA –120 2.6 4.0 200 –0.7 –1.2 3.8 5.0 W mS V –20 –0.4 –24 V –0.9 "2 –0.001 –1.5 "100 –100 –1 mA nA Symb...