Document
Si1300DL
New Product
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
2.0 @ VGS = 4.5 V 2.5 @ VGS = 2.5 V
ID (mA)
250 150
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SOT-323
SC-70 (3-Leads) G 1 3 S 2 D Marking Code KC XX YY Lot Traceability and Date Code Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM PD TJ, Tstg
Limit
20 "8 250 200 500 0.15 0.10 –55 to 150
Unit
V
mA A
W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec.
Symbol
RthJA
Limit
833
Unit
_C/W
Document Number: 71301 S-01883—Rev. A, 28-Aug-00
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Si1300DL
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VDS = 0 V, ID = 10 mA VDS = VGS, ID = 50 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS = 5.0 V, VGS = 2.5 V VDS = 8.0 V, VGS = 4.5 V VGS = 2.5 V, ID = 150 mA VGS = 4.5 V, ID = 250 mA Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 2.5 V, ID = 50 mA IS = 50 mA, VGS = 0 V 120 400 160 mA 800 1.6 1.2 200 0.7 1.2 2.5 2.0 mS V W 20 0.4 24 V 0.9 "2 0.001 1.5 "100 100 5 mA nA
Symbol
Test Condition
Min
Typ
Max
Unit
www.DataSheet4U.com On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
rDS(on)
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = 5 5.0 V, VGS = 0 V V, f = 1 MH MHz 0 V VDS = 5.0 5 0 V, V VGS = 4 4.5 5V V, ID = 100 mA A 350 25 100 20 14 5 pF F 450 pC C
Switchingb, c
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf VDD = 3 3.0 0V V, , RL = 100 W ID = 0.25 0 25 A, A VGEN = 4 4.5 5V V, RG = 10 W 7 25 19 9 12 35 ns 30 15
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. For design only, not subject to production testing. c. Switching time is essentially independent of operating temperature.
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Document Number: 71301 S-01883—Rev. A, 28-Aug-00
Si1300DL
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
1.25 VGS = 3.5 thru 5 V 1.00 I D – Drain Current (A) I D – Drain Current (A) 0.6 3V 0.75 2.5 V 0.50 2V 0.25 1.5 V 0 0 1 2 3 4 1V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0.8 TC = –55_C 25_C
Vishay Siliconix
Transfer Characteristics
0.4 125_C
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0.2
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
7 6 r DS(on) – On-Resistance ( W ) 40 5 4 3 VGS = 2.5 V 2 1 0 0 1 2 ID – Drain Current (A) 3 4 VGS = 4.5 V 0 0 4 C – Capacitance (pF) 50
Capacitance
30
20 Coss 10 Crss
Ciss
8
12
16
20
VDS – Drain-to-Source Voltage (V)
10 V GS – Gate-to-Source Voltage (V) VDS = 6 V ID = 100 mA
Gate Charge
1.6
On-Resistance vs. Junction Temperature
VGS = 4.5 V ID = 100 m A
6
r DS(on) – On-Resistance (W ) (Normalized) 300 400 500 600
8
1.4
1.2
4
1.0
2
0.8
0 0 100 200
0.6 –50
–25
0
25
50
75
100
125
150
Qg – Total Gate Charge (pC)
TJ – Junction Temperature (_C)
Document Number: 71301 S-01883—Rev. A, 28-Aug-00
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Si1300DL
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
3 1 I S – Source Current (A) TJ = 125_C r DS(on) – On-Resistance ( W ) 6 8
On-Resistance vs. Gate-to-Source Voltage
0.1
ID = 250 mA 4
TJ = 25_C
0.01 www.DataSheet4U.com TJ = –55_C
2
0.001 0.00 0.3 0.6 0.9 1.2
0 0 2 4 6 8 10
VSD – Source-to-Drain Voltage (V)
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
0.2 ID = 50 mA
0.1 V GS(th) Variance (V)
–0.0
–0.1
–0.2
–0.3
–0.4 –50
–25
0
25
50
75
100
125
150
TJ – Temperature (_C)
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Document Number: 71301 S-01883—Rev. A, 28-Aug-00
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