SST29VE010

1 Mbit (128K x8) Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 SST29EE010 / SST29LE010 / SST29VE0101Mb Page-Mode flash memories Data Sheet FEATURES: Single Voltage Read and Write Operations – 5.0V-only for SST29EE010 – 3.0-3.6V for SST29LE010 – 2.7-3.6V for SST29VE010 Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention Low Power Consumption – Active Current: 20 mA (typical) for 5V and 10 mA www.DataSheet4U.com (typical) for 3.0/2.7V – Standby Current: 10 µA (typical) Fast Page-Write Operation – 128 Bytes per Page, 1024 Pages – Page-Write Cycle: 5 ms (typical) – Complete Memory Rewrite: 5 sec (typical) – Effective Byte-Write Cycle Time: 39 µs (typical) Fast Read Access Time – 5.0V-only operation: 70 and 90 ns – 3.0-3.6V operation: 150 and 200 ns – 2.7-3.6V operation: 200 and 250 ns Latched Address and Data Automatic Write Timing – Internal VPP Generation End of Write Detection – Toggle Bit – Data# Polling Hardware and Software Data Protection Product Identification can be accessed via Software Operation TTL I/O Compatibility JEDEC Standard – Flash EEPROM Pinouts and command sets Packages Available – 32-lead PLCC – 32-lead TSOP (8mm x 14mm, 8mm x 20mm) – 32-pin PDIP PRODUCT DESCRIPTION The SST29EE/LE/VE010 are 128K x8 CMOS Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain bette...