TH58NVG2S3BTG00
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2
4 GBIT (512M × 8 BIT) CMOS NAND E PROM DESCRIPTION
Lead-Free
The TH58NVG2S3B is a single 3.3 V 4Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096 blocks. The device has a 2...
