DatasheetsPDF.com

J291

Part Number	J291
Manufacturer	Hitachi Semiconductor
Description	2SJ291
Published	Aug 23, 2008
Detailed Description	2SJ291 Silicon P-Channel MOS FET November 1996 com Application High speed power switching Features • ...
Datasheet	J291 PDF File

Overview

2SJ291 Silicon P-Channel MOS FET November 1996 com Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-220AB D G 1 2 3 1.
Gate 2.
Drain (Flange) 3.
Source S 2SJ291 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current com Avalanche current Symbol VDSS VGSS ID ID(pulse)* IDR IAP* 3 1 Ratings –60 ±20 –20 –80 –20 –20 Unit V V A A A A mJ W °C °C Aval...

Similar Datasheet

J201 N-Channel JFETs - Vishay
J201 N-Channel Amplifier - Fairchild Semiconductor
J201 N-Channel JFET Amplifier - Calogic LLC
J201 HIGH GAIN N-CHANNEL JFET - Linear Integrated Systems
J201 N-Channel JFET - InterFET
J201 JFET LOW FREQUENCY/LOW NOISE - Motorola
J201 Amplifier - Micross
J202 JFET Low Frequency / Low Noise - Motorola
J202 N-Channel JFETs - Vishay
J202 N-Channel Amplifier - Fairchild Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)