CFD1933

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON DARLINGTON TRANSISTOR CFD1933 TO-220FP Fully Isolated Plastic Package B CE www.DataSheet4U.com Low Freq. Power Amp. Built in Damper Diode Complementry CSB1342 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE VCBO 80 Collector -Base Voltage VCEO 80 Collector -Emitter Voltage VEBO 7.0 Emitter Base Voltage IC 4.0 Collector Current DC 6.0 Collector Current (Pulse*) 2.0 Collector Power Dissipation @ Ta=25 deg C PC 30 Collector Power Dissipation @ Tc=25 deg C Tj 150 Junction Temperature Tstg -55 to +150 Storage Temperature Range *Single Pulse Pw=100ms ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP VCEO IC=1mA, IB=0 80 Collector Emitter Voltage VCBO IC=50uA, IE=0 80 Collector Base Voltage ICBO VCB=80V, IE=0 Collector Cut off Current IEBO VEB=5V,IC=0 Emitter Cut off Current VCE(Sat)** IC=2A,IB=4mA Collector Emitter Saturation Voltage hFE** IC=2A, VCE=3V 1.0 DC Current Gain Dynamic Characteristics ft VCE=5V,IC=0.2A, 40 Transition Frequency f=10MHz Cob VCB=10V, IE=0 35 Collector Output Capacitance f=1MHz **Pulse test UNIT V V V A A W W deg C deg C MAX 100 3.0 1.5 10 - UNIT V V uA mA V K MHz pF Continental Device India Limited Data Sheet Page 1 of 2 CFD1933 TO-220FP Fully Isolated Plastic Package TO-220FP Fully Isolated Plastic Package A D C DIM A E B C F D E www.DataSheet4U.com MIN 9.80 2.5...