L2SC5658M3T5G

LESHAN RADIO COMPANY, LTD. General Purpose Amplifier NPN Silicon Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. Reduces Board Space www.DataSheet4U.com High hFE, 210 −460 (typical) Low VCE(sat), < 0.5 V ESD Performance: Human Body Model; u 2000 V, Machine Model; u 200 V Available in 8 mm, 7-inch/3000 Unit Tape and Reel This is a Pb−Free Device z We declare that the material of product compliance with RoHS requirements. L2SC5658M3T5G 3 2 1 SOT-723 3 COLLECT OR 1 B ASE 2 EMIT T ER MAXIMUM RATINGS (TA = 25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current − Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 50 50 5.0 100 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Rating Power Dissipation (Note 1) Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 260 150 −55 ~ + 150 Unit mW °C °C 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. ORDERING INFORMATION Device L2SC5658M3T5G Marking 139 Shipping 5000/Tape & Reel 1/4 LESHAN RADIO COMPANY, LTD. L2SC5658M3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0) Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = 5...